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The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and particularly, to a bipolar transistor and a method of manufacturing the bipolar transistor.
2. Description of the Background Art
A bipolar transistor to be used as a power device for an automobile is required to satisfy various characteristics, in addition to higher breakdown voltage and higher cutoff frequency. Of these, as to the breakdown voltage, the higher the breakdown voltage is, the lower the leakage current is, so that a low on-resistance Rdson is realized. In recent years, in order to realize further reduction in on-resistance, the junction depths of a collector layer and an emitter layer are required to be shallower.
With respect to a method of manufacturing a bipolar transistor, a conventional one will be described with reference to FIG. 35.
As shown in FIG. 35, in a first step, an n+ buried region 59 is formed on a p− semiconductor substrate 58 in a collector region of a bipolar transistor. The emitter region, i.e., the n+ buried region 59 is formed after performing ion implantation of p-type impurities. A polysilicon film 61 is formed on a surface of the collector region so as to fill a p− silicon substrate 58 and a base region. The polysilicon film 61 is polished by a CMP (Chemical Mechanical Polishing) method. A p+ impurity doped polysilicon film is formed on a polished surface of the collector region in a second step.
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